Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
Identifieur interne : 000E96 ( Chine/Analysis ); précédent : 000E95; suivant : 000E97Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
Auteurs : RBID : Pascal:09-0466855Descripteurs français
- Pascal (Inist)
- Propriété électrique, Homojonction, Addition indium, Addition phosphore, Nanofil, Nanomatériau, Synthèse nanomatériau, Dépôt chimique phase vapeur, Phosphore, Photoluminescence, Effet concentration, Jonction p n, Diode, Température ambiante, Oxyde de zinc, Monocristal, Courant photoélectrique, Photoconductivité, Courant obscurité, Photodétecteur, ZnO, 8107V, 8107B, 8116, 8115G.
- Wicri :
- concept : Phosphore.
English descriptors
- KwdEn :
- Ambient temperature, CVD, Dark current, Diodes, Electrical properties, Homojunctions, Indium additions, Monocrystals, Nanomaterial synthesis, Nanostructured materials, Nanowires, Phosphorus, Phosphorus additions, Photoconductivity, Photocurrents, Photodetectors, Photoluminescence, Quantity ratio, Zinc oxide, p n junctions.
Abstract
The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 103 and a low forward turn-on voltage of ∼1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 104) reveals that the diode has a potential as extreme sensitive UV photodetectors.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires</title><author><name sortKey="Li, Ping Jian" uniqKey="Li P">Ping-Jian Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Liao, Zhi Min" uniqKey="Liao Z">Zhi-Min Liao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zhang, Xin Zheng" uniqKey="Zhang X">Xin-Zheng Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zhang, Xue Jin" uniqKey="Zhang X">Xue-Jin Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zhu, Hui Chao" uniqKey="Zhu H">Hui-Chao Zhu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Gao, Jing Yun" uniqKey="Gao J">Jing-Yun Gao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Laurent, K" uniqKey="Laurent K">K. Laurent</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est</s1><s2>77454 Marne la Vallee</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marne la Vallee</settlement></placeName></affiliation></author><author><name sortKey="Leprince Wang, Y" uniqKey="Leprince Wang Y">Y. Leprince-Wang</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est</s1><s2>77454 Marne la Vallee</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marne la Vallee</settlement></placeName></affiliation></author><author><name sortKey="Wang, N" uniqKey="Wang N">N. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Physics Department, Hong Kong University of Science and Technology</s1><s3>HKG</s3><sZ>9 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Physics Department, Hong Kong University of Science and Technology</wicri:noRegion></affiliation></author><author><name sortKey="Yu, Da Peng" uniqKey="Yu D">Da-Peng Yu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0466855</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0466855 INIST</idno><idno type="RBID">Pascal:09-0466855</idno><idno type="wicri:Area/Main/Corpus">004E13</idno><idno type="wicri:Area/Main/Repository">005590</idno><idno type="wicri:Area/Chine/Extraction">000E96</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>CVD</term><term>Dark current</term><term>Diodes</term><term>Electrical properties</term><term>Homojunctions</term><term>Indium additions</term><term>Monocrystals</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nanowires</term><term>Phosphorus</term><term>Phosphorus additions</term><term>Photoconductivity</term><term>Photocurrents</term><term>Photodetectors</term><term>Photoluminescence</term><term>Quantity ratio</term><term>Zinc oxide</term><term>p n junctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété électrique</term><term>Homojonction</term><term>Addition indium</term><term>Addition phosphore</term><term>Nanofil</term><term>Nanomatériau</term><term>Synthèse nanomatériau</term><term>Dépôt chimique phase vapeur</term><term>Phosphore</term><term>Photoluminescence</term><term>Effet concentration</term><term>Jonction p n</term><term>Diode</term><term>Température ambiante</term><term>Oxyde de zinc</term><term>Monocristal</term><term>Courant photoélectrique</term><term>Photoconductivité</term><term>Courant obscurité</term><term>Photodétecteur</term><term>ZnO</term><term>8107V</term><term>8107B</term><term>8116</term><term>8115G</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Phosphore</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10<sup>3</sup> and a low forward turn-on voltage of ∼1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10<sup>4</sup>) reveals that the diode has a potential as extreme sensitive UV photodetectors.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>9</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>LI (Ping-Jian)</s1></fA11><fA11 i1="02" i2="1"><s1>LIAO (Zhi-Min)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHANG (Xin-Zheng)</s1></fA11><fA11 i1="04" i2="1"><s1>ZHANG (Xue-Jin)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHU (Hui-Chao)</s1></fA11><fA11 i1="06" i2="1"><s1>GAO (Jing-Yun)</s1></fA11><fA11 i1="07" i2="1"><s1>LAURENT (K.)</s1></fA11><fA11 i1="08" i2="1"><s1>LEPRINCE-WANG (Y.)</s1></fA11><fA11 i1="09" i2="1"><s1>WANG (N.)</s1></fA11><fA11 i1="10" i2="1"><s1>YU (Da-Peng)</s1></fA11><fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboralory, School of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est</s1><s2>77454 Marne la Vallee</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Physics Department, Hong Kong University of Science and Technology</s1><s3>HKG</s3><sZ>9 aut.</sZ></fA14><fA20><s1>2513-2518</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000187518920010</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>39 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0466855</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10<sup>3</sup> and a low forward turn-on voltage of ∼1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10<sup>4</sup>) reveals that the diode has a potential as extreme sensitive UV photodetectors.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A16</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electrical properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Homojonction</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Homojunctions</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Addition indium</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium additions</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Addition phosphore</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Phosphorus additions</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Nanofil</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Nanowires</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>CVD</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Phosphore</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Phosphorus</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Effet concentration</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Quantity ratio</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Jonction p n</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>p n junctions</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Diode</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Diodes</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Température ambiante</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Monocristal</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Monocrystals</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Courant photoélectrique</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Photocurrents</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Photoconductivité</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Photoconductivity</s0><s5>30</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Courant obscurité</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Dark current</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Corriente obscuridad</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Photodétecteur</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Photodetectors</s0><s5>32</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8116</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>341</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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